Method of forming and aligning patterns in deposted overlaying o

Fishing – trapping – and vermin destroying

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437161, 437228, 437944, 437962, 156643, 156646, 156656, 1566591, 148DIG105, 148DIG106, H01L 21283, H01L 2131

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active

051852934

ABSTRACT:
A method is described for forming patterns in deposited overlayers on GaAs and for aligning the formed patterns with etch features produced through dry processing. The deposited overlayers on GaAs are protected during pattern formation and subsequent processing by a durable, process integrable mask of hydrogenated amorphous carbon.

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Kakuchi et al., "Amorphous Carbon Films . . . ", Appl. Phys. Lett., 48(13), 31 Mar. 1986, pp. 835-837.

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