Method of fabricating a SOI transistor with pocket implant and b

Details Method of fabricating a SOI transistor with pocket implant and b Method of fabricating a SOI transistor with pocket implant and b

1991-01-29

1993-02-09

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 21, 437 30, 257327, 257347, H01L 2336

Patent

active

051852802

ABSTRACT:
A silicon-on-insulator MOS transistor is disclosed that has an implanted region of the same conductivity type as the body underneath one or both of the extended drain and source portoins of the drain and the source with and without a BTS contact or a general body contact. With only the pocket implants, the back gate threshold voltage is enhanced to reduce the possibility of back gate current flowing. With the pocket implants and a body contact, the floating body effects are minimized. Due to the BTS contact being located as far into the source as the pocket implant extends, negligible impact is made on the device channel. Ohmic connection between the source and the body is made for example by way of silicidation.

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Kumamoto et al., "An SOI Structure for Flash A/D Converter", IEEE Journal of Solid-State Circuits, vol. 23, No. 1, Feb. 1988, pp. 198-201.

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