Fishing – trapping – and vermin destroying
Patent
1991-04-23
1993-02-09
Quach, T. N.
Fishing, trapping, and vermin destroying
437 27, 437150, 748DIG10, 748DIG2, H01L 21328, H01L 21265
Patent
active
051852764
ABSTRACT:
A method for improving the low temperature current gain of silicon bipolar transistors by implanting a first and a second impurity of the same conductivity type into the base region to provide a high doping level base that increases bandgap narrowing without decreasing freeze-out activation energy. The second impurity is selected to have a higher ionization energy that that of the first impurity. The second impurity thereby freezes out sooner than the first impurity resulting in the freeze-out activation energy being equal to or greater than the energy with only the first impurity.
REFERENCES:
patent: 4226650 (1980-10-01), Takahashi et al.
patent: 4523370 (1985-06-01), Sullivan et al.
patent: 4557296 (1986-03-01), Wong
patent: 4559696 (1985-12-01), Anand et al.
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4889819 (1989-12-01), Davari et al.
Dumke, W. P., "The Effect of Base Doping on the Performance of Si Bipolar Transistors at Low Temperatures", IEEE Transactions on Electron Devices, 28(5):494 (1981).
Cressler, J. D., et al., "On the Low-Temperature Static and Dynamic Properties of High-Performance Silicon Bipolar Transistors", IEEE Transactions on Electron Devices, 36(8):1489 (1989).
Tang, D. C., "Heavy Doping Effects in PNP Bipolar Transistors", IEEE Transactions on Electron Devices, 27(3):563 (1980).
Woo, J., et al., "Optimization of Bipolar Transistors for Low Temperature Operation", IEDM Technical Digest, 401 (1987).
Stork, J. M. C., et al., "High Performance Operation of Silicon Bipolar Transistors at Liquid Nitrogen Temperatures", IEDM Technical Digest, 405 (1987).
Wolf, et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 136-139, 156-158, 176-183, 280-283, 324-327.
Chen Tze-Chiang
Cressler John D.
International Business Machines - Corporation
Quach T. N.
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