Method of manufacturing diamond semiconductor

Details Method of manufacturing diamond semiconductor Method of manufacturing diamond semiconductor

1994-09-27

1996-04-16

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117929, H01L 21268

Patent

active

055082084

ABSTRACT:
In a method of manufacturing diamond semiconductor mainly composed of carbon, a technique is provided which is free from the possibility of destruction of diamond structure, permits n-type doping into diamond and further permits high concentration n-type doping. In this method of diamond semiconductor manufacture, lithium atoms (which may be produced from a nitrogen compound of lithium, for instance lithium azide) is doped using ECR plasma into diamond 102 with the surface thereof having been cleaned, if necessary.

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patent: 5306529 (1994-04-01), Nishimura
Patent Abstracts of Japan, vol. 16, No. 482, Oct. 7, 1992 & JP-A-60 04 174 517.

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