Method of manufacturing a semiconductor device

Metal treatment – Compositions – Heat treating

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148175, 148187, H01L 21265

Patent

active

040090574

ABSTRACT:
A method of manufacturing a semiconductor device, in which on a basic mask of a first material there is provided a layer of a second material, after which the first material with the second material present thereon is removed, and an island of the second material remaining with a window of the basic mask is used as an alignment feature for a subsequent mask.

REFERENCES:
patent: 3560278 (1971-02-01), Sanera
patent: 3640782 (1972-02-01), Brown et al.
patent: 3697318 (1972-10-01), Feinberg et al.
patent: 3775192 (1973-11-01), Beale
patent: 3793088 (1974-02-01), Eckton, Jr.
patent: 3833429 (1974-09-01), Monma et al.
patent: 3858304 (1975-01-01), Leedy et al.

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