Optical waveguides – Integrated optical circuit
Reexamination Certificate
2002-11-13
2004-04-27
Kim, Ellen E. (Department: 2874)
Optical waveguides
Integrated optical circuit
Reexamination Certificate
active
06728432
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of Invention
This invention is in the field of re-configurable hybrid assemblies on low loss substrates.
2. Description of the Related Art
Monolithic Integrated Circuits (MMIC) technology is a technology supporting many of the present generation of military and commercial radio frequency sensors and communication applications. MMICs include active devices, such as Field Effect Transistors and bipolar transistors, passive elements such as MIM capacitors, thin film and bulk resistors and inductors integrated on a single semi-insulating Gallium Arsenide substrate. Circuit performance and topology is generally fixed at the time of manufacture, typically using “static” impedance matching networks to interconnect various elements. This static approach limits a circuit to a single function, precludes its re-configuration, restricts its use for new modes, functions, operations and band-width. This inability to adapt to new configurations in real time to new requirements limits system performance, decreases system mean time between failure as well as useful operating lifetime, and flexibility.
Micro-Electro-Mechanical Systems (MEMS) is the integration of mechanical elements, sensors, actuators, and electronics on a common substrate through the utilization of microfabrication technology. While typical electronics elements such as transistors are fabricated using integrated circuit (IC) process sequences (e.g., CMOS, Bipolar, or BICMOS processes), micromechanical MEMS structures are fabricated using process compatible micromachining processes that selectively etch away parts of the silicon wafer or add new structural layers to form the mechanical and electromechanical devices.
An example of a MEMS structure having a bidirectional rotating member having two positions is described in U.S. Pat. No. 6,072,686, incorporated herein by reference in its entirety.
Another example of a MEMS structure for microwave (millimeter wave) applications is described in U.S. Pat. No. 6,046,659, incorporated herein by reference in its entirety.
SUMMARY OF THE INVENTION
A first MEM
329
having a first contact and a second contact is mounted on a substrate
301
. A PA power cell
325
is thermally connected to the same substrate
301
using a thermal bump
321
. The power cell
325
is electrically insulated from the substrate
301
. The power cell
325
has a first power cell bump
311
and a second power cell bump
309
as pathways for I/O functions.
A first insulator
319
is mounted on substrate
301
supporting a second MEM
327
above the substrate
301
. The second MEM
327
has a first connection
315
and a second connection
317
. The first connection and the second connection are located on a bottom surface of the second MEM
327
.
A first conductive via
313
vertically traverses the first insulator
319
and is connected to the first connection
315
from the second MEM
327
. This first conductive via
313
is further connected to a first conductor
337
. The first conductor is insulated from substrate
301
by a first insulating layer
333
. The first conductor
337
is further connected to the first power cell bump
311
.
A second conductor
335
is insulated from the substrate
301
by a second insulating layer
331
. The second conductor
335
is connected to a second conductive via
307
. The second conductive via
307
traverses vertically a second insulator
339
. The second conductive via
307
is connected to a first metal member
305
. The first metal member
305
is formed over the upper surface of the second insulator
339
and connected to a first input to the first MEM switch
329
.
A second metal member
303
is connected to the second contact of the first MEM switch
329
. The second metal member is formed over the upper surface of a third insulator
323
. The third insulator
323
is positioned over substrate
301
.
REFERENCES:
patent: 5719073 (1998-02-01), Shaw et al.
patent: 5761350 (1998-06-01), Koh
patent: 6607934 (2003-08-01), Chang et al.
Allison Robert C.
Pierce Brian M.
Tonomura Samuel D.
Alkov Leonard A.
Kim Ellen E.
Lenzen, Jr. Glenn H.
Raytheon Company
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