Encapsulated capacitor structure having a dielectric interlayer

Details Encapsulated capacitor structure having a dielectric interlayer Encapsulated capacitor structure having a dielectric interlayer

1997-10-09

1998-10-13

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613013, 361303, 361305, 3613061, 3613063, 361312, 361313, 361320, 3613211, 3613214, 257296, 257297, 257306, 257310, H01G 406, H01G 400, H01G 4008, H01G 420

Patent

active

058221751

ABSTRACT:
An encapsulated capacitor structure and method for fabricating same. The capacitor structure is created by selectively depositing a lower electrode, a dielectric thin film of BST or other ferrodielectric, and an upper electrode, onto a substrate, and subsequently depositing a conformal layer of a non-reductively deposited dielectric material. Contact windows are then opened through the encapsulating layer for contacting the capacitor electrodes. The underlying structure is protected by the encapsulating layer from metal deposition and post-processing which would otherwise damage the structure.

REFERENCES:
patent: 5206788 (1993-04-01), Larson et al.
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5355277 (1994-10-01), Hoshiba
patent: 5506748 (1996-04-01), Hoshiba
patent: 5576222 (1996-11-01), Arai et al.
Authors: M. Azuma et al.; Title: Electrical Characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics; Date: 1992.
Authors: E. Fujii et al.; Title: ULSI Dram Technology With Ba0.7sr0.3Ti03 Film of 1.3nm Equivalent Si02 Thickness and 10-9A/cm2 Leakage Current; Date: Dec. 1992; Place of Publication: International Electron Device Meeting (IEDM).

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