Method and apparatus for measuring the metallurgical channel len

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324765, G01R 1908

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active

058217665

ABSTRACT:
A method and apparatus for measuring the metallurgical channel length of a semiconductor device includes the steps of determining capacitance of gate to substrate in a multiple MOS transistor pattern and MOS capacitor pattern which have the same gate area; subtracting the capacitance of gate to substrate in a MOS transistor from that in a MOS capacitor for providing a difference curve; determining the overlap length by using the capacitance corresponding to a peak shown in the differences curve; and subtracting two times the overlap length .DELTA.L from the gate length Ldrawn in the MOS transistor for providing the metallurgical channel length.

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"A Capacitance Method to Determine the Metallurgical Gate-to-Source/Drain Overlap Length of Submicron LDD MOSFETS", M. Jo et al, Proc. IEEE Int. Conference on Microelectronic Test Structures, vol. 8, Mar. 1995, pp. 151-155.
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