Cleaved semiconductor device with {11-20} plane

Details Cleaved semiconductor device with {11-20} plane Cleaved semiconductor device with {11-20} plane

1996-12-18

1998-10-13

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 95, 257 96, 257 97, 257103, H01L 3300

Patent

active

058215689

ABSTRACT:
A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semiconductor layer grown on the substrate or the substrate easily succumbs to cleavage, then the semiconductor layer together with the substrate can be broken into chips in an easy-to-cleave plane. The cleaved surface of the semiconductor layer can be positively formed as an optically superior surface. A compound semiconductor layer 2 containing at least one of the elements {Ga, Al, In} and N is formed on the substrate 1. This compound semiconductor layer 2 has a pair of facets of {11-20} plane substantially perpendicular to the substrate 1.

REFERENCES:
patent: 4567393 (1986-01-01), Asai et al.
patent: 5571603 (1996-11-01), Utumi et al.

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