High-resolution light-sensing and light-emitting diode array

Details High-resolution light-sensing and light-emitting diode array High-resolution light-sensing and light-emitting diode array

1996-12-11

1998-10-13

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 91, 257101, 257443, 257463, 257464, H01L 3300

Patent

active

058215670

ABSTRACT:
A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.

Affiliated with

Also associated with

Rating

High-resolution light-sensing and light-emitting diode array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-resolution light-sensing and light-emitting diode array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-resolution light-sensing and light-emitting diode array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-315186