Electron beam exposure system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H01J 37302

Patent

active

058215506

ABSTRACT:
A pattern density for each of regions on a wafer is calculated from circuit pattern data, and a stage speed suitable for the pattern density for each of the regions is determined. An acceleration is etermined from the difference between the stage speeds for two adjacent the regions, and a higher one of the stage speeds is corrected into a lower stage speed such that the determined acceleration becomes smaller than a predetermined value. Inflection points where the stage speeds change are found. A quadratic function interconnecting adjacent two of the inflection points is determined, and the inflection points are interconnected with a curve represented by the quadratic function, thereby determining a path of movement for the stage of an electron beam exposure system. The stage is controlled to move along the path of movement thus determined.

REFERENCES:
patent: 5180920 (1993-01-01), Kai et al.
patent: 5194741 (1993-03-01), Sakamoto et al.
patent: 5610406 (1997-03-01), Kai et al.

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