Method for eliminating of cycling-induced electron trapping in t

Details Method for eliminating of cycling-induced electron trapping in t Method for eliminating of cycling-induced electron trapping in t

1994-10-11

1996-01-16

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

G11C 1300

Patent

active

054854237

ABSTRACT:
There is provided an improved method for eliminating of cycling-induced electron trapping in the tunneling oxide of flash EEPROM devices. A relatively low positive pulse voltage is applied to a source region of the EEPROM devices during an entire erase cycle. Simultaneously, a negative ramp voltage is applied to a control gate of the EEPROM devices during the entire erase cycle so as to accomplish an averaging tunneling field from the beginning of the erase cycle to the end of the erase cycle.

REFERENCES:
patent: 4434478 (1984-02-01), Cook et al.
patent: 5042009 (1991-08-01), Kazeroumiam et al.
patent: 5315547 (1994-05-01), Shaji et al.

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