Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1992-07-31

1993-12-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

257 14, 257 15, 257 18, H01S 319

Patent

active

052727122

ABSTRACT:
A semiconductor laser device includes a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer disposed on a first conductivity type substrate. A multiquantum barrier structure is disposed between the active layer and one of the cladding layers. The active layer includes a layer with a lattice constant different from the lattice constant of the first conductivity type substrate by at least 0.1 percent so that a strain is applied to the active layer. The threshold current is significantly reduced, resulting in a high power semiconductor laser capable of operating at a high temperature.

REFERENCES:
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patent: 4999844 (1991-03-01), Imamoto
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5091756 (1992-02-01), Iga et al.
Sugimoto et al., "Indium Composition Dependent Threshold Current Density in Strained InGaAs/AlGaAs Quantum Well Lasers", Japanese Journal of Applied Physics, vol. 30, No. 12B, 1992, pp. L2098-L2100.
Takagi et al., "Design and Photoluminescence Study on a Multiquantum Barrier", IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1511-1519.
Iga et al., "Electron Reflectance of Multiquantum Barrier (MQB)", Electronics Letters, vol. 22, No. 19, Sep. 1986, pp. 1008-1010.
Kishino et al., "The Lowest J.sub.th (840A/cm.sup.2) and High T.sub.o (167K) Achievements of 660 nm GaInP/AlInP Visible Light Lasers by a Novel Multi-Quantum Barrier (MQB) Effect", 12th IEEE International Semiconductor Laser Conference, Sep. 1990, pp. 21-22.
Rennie et al., "High Temperature (90.degree. C.) CW Operation of 646nm InGaAlP Laser Containing Multiquantum Barrier", Electronics Letters, vol. 28, No. 2, Jan. 1992, pp. 150-151.

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