Projection exposure apparatus and method employing...

Photocopying – Projection printing and copying cameras – Illumination systems or details

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C355S053000

Reexamination Certificate

active

06661498

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to a projection exposure and method for use with a photolithography process for manufacturing a semiconductor device, etc. and a projection optical system thereof and, more particularly, to a projection exposure apparatus and method and a projection optical system that are suitable for an application to a case where a periodical pattern such as, e.g., a line-and-space pattern is transferred on a photosensitive substrate.
2. Related Background Art
A projection optical system for a projection exposure apparatus used when forming hyperfine patterns of, e.g., a semiconductor integrated circuit, a liquid crystal display, etc. in a photolithography process is required to exhibit an extremely high image forming characteristic in order to transfer a variety of different patterns on a reticle (or photomask) onto a photosensitive substrate, such as a wafers, with a fidelity.
Generally, important factors for transferring the hyperfine reticle patterns onto the photosensitive substrate through the projection optical system with fidelity are depth of focus and resolution of the projection optical system. The resolution may be improved simply by increasing a numerical aperture of the projection optical system.
Herein, a relationship between the resolution and the numerical aperture will be explained. In this connection, the patterns of the normal integrated circuit are arrayed mainly in two directions orthogonal to each other, particularly, in the lengthwise (short-side direction) or the cross-wise direction (long-side direction) that are parallel respective sides of shot areas on the wafer. However, there may be a layer of the integrated circuit including very few patterns (oblique patterns) arrayed in an oblique direction or in which there is no oblique pattern at all. Herein, an explanation will be given by taking an example wherein periodic patterns arrayed in the lengthwise direction on, e.g., the reticle are irradiated with illumination light beams for exposure.
Some of the illumination light beams falling on the reticle are partly blocked by the periodic patterns thereof, while the illumination light beams penetrating the reticles contain not only the light components (0th-order) directly passing therethrough but also the light components (diffracted light) diffracted and deflected by the periodic patterns. These two kinds of light components pass through the projection optical system and interfere with each other on the photosensitive substrate to form bright-and-dark fringes, thereby transferring the periodic patterns. Herein, a diffracting angle &thgr; of the diffracted light generated from the reticle is a function of a wavelength &lgr; of the illumination light and a pitch P of the periodic patterns, and, with respect to (n)th-order (n is an integer) diffracted light, the following formula (1) is established:
sin &thgr;=
n&lgr;/P
  (1)
That is, the diffracting angle &thgr; becomes larger as the patterns are hyperfiner. Hence, there has been developed the projection optical system (projection lens system and projection mirror system) having a larger numerical aperture to transfer the much hyperfiner patterns with a high accuracy by increasing the resolution. Then, a stop (aperture stop) for defining the numerical aperture is disposed on a pupil plane (Fourier transform plane with respect to the reticle pattern surface) of the projection optical system. The aperture of the conventional aperture stop is of a circular shape, and especially none of those aperture stops has a directivity.
When the circular aperture stop is provided on the pupil plane of the projection optical system however, a maximum diffracting angle at which the light passes through the projection optical system differs in accordance with an incident angle in a direction perpendicular to an arraying direction of the periodic patterns.
FIGS. 12 and 13
show a relationship between the incident angle of the illumination light upon a reticle
300
and a circular aperture stop
302
of the projection optical system.
As illustrated in
FIG. 12
, when the illumination light (vertical illumination light) is incident, parallel to an optical axis, on periodic patterns
304
arrayed in the X-direction on the reticle
300
, the diffracted light of an exit angle &thgr;
0
corresponding to a numerical aperture (termed NA) of the projection optical system is capable of passing through the projection optical system. That is, in the case of the vertical illumination light, a sine of the effective exit angle &thgr;
0
of the diffracted light is substantially equal to NA.
However, when the illumination light is incident on the reticle
300
with an inclination in the Y-direction to the optical axis AX, as illustrated in
FIG. 13
, a quantity of the diffracted light capable of passing through the projection optical system is smaller than the vertical illumination light. Namely, when the illumination light is incident with an inclination in the Y-direction, the sine of an effective exit angle &thgr;
1
of the diffracted light is smaller than NA.
For instance, if the sine of the incident angle of the illumination light in the Y-direction perpendicular to the arraying direction of the patterns is 0.7 times the numerical aperture on the incident side (NA of the illumination optical system), it follows that the sine of the effective exit angle of the diffracted light becomes 0.7 times (=0.7 NA) the sine of the effective exit angle of the diffracted light in the case of the vertical illumination light.
Further, in the case of a the larger numerical aperture, a range of the incident angle on the wafer is also increased, and hence a phase difference between the light beams for forming the image due to a difference between the incident angles is increased. This decreases an effect in which the light beams interfere and thus enhance each other, even in, e.g., a bright-image position, and there is a larger degree of decrease in resultant image contrasts. It has been gradually recognized in recent years that an excessive numerical aperture is not desirable, in order to obtain a sufficient depth of focus.
As explained above, in the projection optical system including the circular aperture stop, the effective exit angle differs depending on the incident angle of the illumination light incident on the projection optical system. If the sine of the incident angle optimizes the numerical aperture of the projection optical system with respect to the illumination light, that is, approximately, e.g., 0.7 times the numerical aperture, on the incidence side, the numerical aperture is excessive for the vertical illumination light. For this reason, even when in the case of an expensive projection optical system having a large numerical aperture, and when having such a circular aperture stop that the exit angle of the light capable of passing through the projection optical system differs depending on the incident angle, there is a disadvantage in that the performance thereof is insufficient.
Further, though the great majority of patterns of the actual integrated circuit are formed of the patterns in the lengthwise and crosswise-directions, hyperfine patterns may also exist in oblique directions. In such a case, it is also desirable that the numerical aperture be not varied depending on the incident angle in an oblique direction. Hence, there is needed a projection optical system capable of high performance even with patterns in oblique directions as the necessity arises.
SUMMARY OF THE INVENTION
It is a primary object of the present invention, which was devised in view of the above points, to provide a projection optical system having a proper numerical aperture on the whole with less difference between effective exit angles dependent on incident angles in a direction perpendicular to a predetermined direction of illumination light and a projection exposure apparatus and method employing this projection optical system.
A projection optical sys

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Projection exposure apparatus and method employing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Projection exposure apparatus and method employing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Projection exposure apparatus and method employing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3138794

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.