Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1997-07-16

1998-10-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 18, 216 38, 216 88, 438627, 438628, 438633, H01L 2100

Patent

active

058211683

ABSTRACT:
A process for forming a semiconductor device (68) in which an insulating layer (52) is nitrided and then covered by a thin adhesion layer (58) before depositing a composite copper layer (62). This process does not require a separate diffusion barrier as a portion of the insulating layer (52) has been converted to form a diffusion barrier film (56). Additionally, the adhesion layer (58) is formed such that it can react with the interconnect material resulting in strong adhesion between the composite copper layer (62) and the diffusion barrier film (56) as well as allow a more continuous interconnect and via structure that is more resistant to electromigration.

REFERENCES:
patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5604158 (1997-02-01), Cadien
patent: 5741626 (1998-04-01), Jain et al.
Ting et al. "The Use of Titanium-Based Contact Barrier Layers in Silicon Technology", Thin Solid Films, 96, Electronics and Optics, pp. 327-345 (1982).
Vogt et al. "Plasma Deposited Dielectric Barriers for Cu Metallization", Electrochemical Society Proceedings, vol. 96-12, pp. 613-622 (1996).
Author Anonymous, "Forming Tungsten-Nitrogen Films Using Plasma Etching", Research Disclosure 298087, Feb. 1989 and Abstract.
Mikagi, et al. "Barrier Metal Free Copper Damascene Interconnection Technology Using Atmospheric Copper Reflow and Nitrogen Doping in SiOF Film", IEEE, International Electron Devicese, Meeting, pp. 395-468 (1996).
Bai, et al., "Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects", Mat. Res. Soc. Symp. Proc., vol. 403, pp. 501-506 (1996).

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