ESD protection using npn bipolar transistor

Details ESD protection using npn bipolar transistor ESD protection using npn bipolar transistor

1992-08-12

1994-01-04

DeBoer, Todd

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 91, H02H 904

Patent

active

052765822

ABSTRACT:
A circuit for protecting an IC against electrostatic discharge includes a npn transistor having its collector connected to a first I/O pad and its emitter connected to VSS. A zener diode has its cathode connected to the first I/O pad, its anode connected both to the base of the npn transistor and to a first resistor. The other end of the resistor is connected to VSS.

REFERENCES:
patent: 4423431 (1983-12-01), Sasaki
patent: 4712152 (1987-12-01), Iiu

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