Method for producing a single crystal using czochralski techniqu

Details Method for producing a single crystal using czochralski techniqu Method for producing a single crystal using czochralski techniqu

1998-06-04

1999-08-17

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117222, C30B 3500

Patent

active

059388420

ABSTRACT:
A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal is controllable with ease and a good accuracy, which puller comprises a crucible containing raw material, heater for melting by heating the raw material and a heat insulating cylinder surrounding them, the heat insulating cylinder being cross-sectionally divided by an annular separation gap or gaps into parts and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.

REFERENCES:
patent: 4613486 (1986-09-01), Tatsumi et al.
patent: 5098675 (1992-03-01), Matsuo et al.
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5766347 (1998-06-01), Shimomura et al.
H. Yamagishi et al. Semiconductor Silicon, (1994), "Evaluation of FFDS and Cops in Silicon Single-Crystals", pp. 124-135.

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