Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1998-03-09
1999-08-17
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 84, 117 90, 117 93, 117103, 4272481, 427255, C30B 2303
Patent
active
059388404
ABSTRACT:
In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
REFERENCES:
patent: 4745088 (1988-05-01), Inoue et al.
patent: 5221556 (1993-06-01), Hawkin et al.
Ikegami Kaoru, Gas Phase Growth Device (Abstract), Sep. 11, 1990.
M. Takikawa et al., Journal of Crystal Growth, Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs', Jun. 1990.
Habuka Hitoshi
Katayama Masatake
Mayuzumi Masanori
Tate Naoto
Hiteshew Felisa
Shin-Etsu Handotai Co., Ltd
Snider Ronald R.
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