Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1995-05-25
1996-01-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257557, 257591, H01L 2970, H01L 29735
Patent
active
054850339
ABSTRACT:
A semiconductor device including a vertical transistor, for example of the pnp type, having a p-type substrate (1) which forms the collector, with at its surface an epitaxial n-type layer (3) in which a p-type emitter region (15, 16) is formed, while the portion (9) of the epitaxial layer (3) lying between the emitter (15, 16) and the collector (1) forms the base. In this vertical transistor, the current gain is very strongly increased when the emitter is formed by a first partial emitter region which is weakly p-type doped and which extends below an insulating layer (6) and by a second partial emitter region (16) which is strongly p.sup.++ -type doped and which extends below the contact zone (26) of the emitter defined by an opening in the insulating layer (6). The respective thicknesses and doping levels of the first (15) and second (16) emitter regions are provided such that the first region is transparent to electrons and the second forms a screen against electrons. In addition, the ratio of the areas of the two partial regions (Sox/Sm) is higher than 2, while the area (Sm) of the second region (16) is chosen to be small. The various regions of the transistor are formed by very thin layers. The transistor may alternatively be of the npn type.
REFERENCES:
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4032957 (1977-06-01), Yagi et al.
patent: 4949145 (1990-08-01), Yano et al.
patent: 4951108 (1990-08-01), Leduc
"Some Aspects of LEC Transistor Behavior" H. G. De Graaf et al, Solid State Electronics No. 19, pp. 809-814.
"The Physics and Modeling of Heavily Doped Emitters" Jesus A. Del Alamo et al, IEEE Transactions on Electron Devices, vol. ED-31, No. 12, Dec. 1984, pp. 1878-1888.
Biren Steven R.
Fahmy Wael M.
Hille Rolf
U.S. Philips Corporation
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