Electrode structure for a semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

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Details

257741, 257751, 257762, 257763, H01L 2348

Patent

active

052723763

ABSTRACT:
According to the present invention oxidation of Cu at wire bonding in a pad electrode using a Cu thin film as well as oxidation of Cu at wireless bonding in a bump electrode using a Cu thin film can be prevented.

REFERENCES:
patent: 4600600 (1991-07-01), Pammer et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5021300 (1991-06-01), Stacey
patent: 5068709 (1991-11-01), Egawa et al.

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