Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2002-05-29
2003-05-27
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S253000, C438S396000
Reexamination Certificate
active
06569689
ABSTRACT:
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
Not Applicable.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention is directed generally to a structure having thin films that does not exhibit spotting and non-wetting characteristics and, more particularly, to a structure having thin films that may include an adhesion layer.
2. Description of the Background
Films used in integrated circuits are becoming thinner as minimum feature sizes decrease and as the competitive nature of integrated circuit fabrication forces manufactures to produce smaller parts (i.e. die) in order to produce smaller and less expensive integrated
A result of decreasing film thickness is that some materials will not form a conformal film below certain thicknesses. Instead, those materials exhibit “spotting” or “non-wetting” characteristic whereby the material forms “islands” separated by gaps where the material will not form. One example of such a material is platinum, which exhibits spotting when formed on silicon at a thickness less than about six hundred (600) Angstroms and then annealed to 700° C.
Platinum, as well as other materials, is important when forming integrated circuits because it exhibits desirable characteristics during fabrication steps. For example, platinum does not readily form an oxide during annealing in oxygen.
Therefore, the need exists for a structure having thin films that does not exhibit spotting or non-wetting characteristics.
BRIEF SUMMARY OF THE INVENTION
The present invention is directed to a conductive structure including an adhesion layer and a conductor in contact with the adhesion layer and having a thickness of less than six hundred Angstroms. The present invention may be used to form devices, such as capacitor. A capacitor constructed according to the present invention includes an adhesion layer, a conductor in contact with the adhesion layer and having a thickness of less than six hundred Angstroms, a second conductor, and a dielectric between the first and second conductors.
The present invention is also directed towards structures wherein iridium or rhodium may be used in place of the combination of the adhesion layer and conductor.
The present invention solves problems experienced with the prior art because it allows for the formation of thin films, such as platinum, without wetting effects. Those and other advantages and benefits of the present invention will become apparent from the description of the preferred embodiments hereinbelow.
REFERENCES:
patent: 4476547 (1984-10-01), Miyasaka et al.
patent: 5003428 (1991-03-01), Shepherd
patent: 5005102 (1991-04-01), Larson
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5497017 (1996-03-01), Gonzales
patent: 5532956 (1996-07-01), Watanabe
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5576928 (1996-11-01), Summerfelt et al.
patent: 5581436 (1996-12-01), Summerfelt et al.
patent: 5589284 (1996-12-01), Summerfelt et al.
patent: 5604659 (1997-02-01), Madan
patent: 5604696 (1997-02-01), Takaishi
patent: 5608247 (1997-03-01), Brown
patent: 5619393 (1997-04-01), Summerfelt et al.
patent: 5723171 (1998-03-01), Cuchiaro et al.
patent: 5926716 (1999-07-01), Tobben et al.
patent: 5937294 (1999-08-01), Sandhu et al.
patent: 5952687 (1999-09-01), Kawakubo et al.
patent: 6049103 (2000-04-01), Horikawa et al.
patent: 6051859 (2000-04-01), Hosotani et al.
patent: 6043526 (2000-06-01), Ochiai
patent: 6080617 (2000-06-01), Fujii et al.
patent: 6100200 (2000-08-01), Van Buskirk et al.
patent: 6153490 (2000-11-01), Xing et al.
patent: 6218297 (2001-04-01), Marsh
Micro)n Technology, Inc.
Nguyen Tuan H.
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