Silicon thin film member

Details Silicon thin film member Silicon thin film member

1994-11-29

1996-01-16

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of quartz or glass

428336, 428446, 428448, 428450, 428688, 428698, 428699, 428704, B32B 1706

Patent

active

054846587

ABSTRACT:
A silicon thin film member according to the present invention comprises a supporting substrate and an a-Si thin film formed by plasma CVD and including hydrogen. The a-Si thin film has a distribution of hydrogen density in which a hydrogen content of the a-Si thin film has a maximum value of 1.times.10.sup.22 atoms/cm.sup.3 or more in a position 20 nm or less away from an interface between the a-Si thin film and the supporting substrate, and the maximum value of the hydrogen content is larger than a hydrogen content of the supporting substrate on the interface. The hydrogen content of the a-Si thin film decreases from the position toward the interface and decreases from the position in a direction from the supporting substrate to the a-Si thin film.

REFERENCES:
patent: 5378541 (1995-01-01), Ihara

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