Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1995-05-19
1997-09-02
Tsai, Jey
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438240, 438608, 438785, H01L 2170, H01L 2700
Patent
active
056630883
ABSTRACT:
A method of forming a dielectric layer includes, a) chemical vapor depositing a dielectric layer of Ta.sub.2 O.sub.5 atop a substrate; and b) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing a first electrically conductive capacitor plate over the node; c) chemical vapor depositing a capacitor dielectric layer of Ta.sub.2 O.sub.5 over the first electrically conductive capacitor plate; and d) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A capacitor construction is also disclosed. The preferred amorphous diffusion barrier layer is electrically conductive and constitutes a metal organic chemical vapor deposited TiC.sub.x N.sub.y O.sub.z, where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0. Such is preferably deposited by utilizing a gaseous titanium organometallic precursor of the formula Ti(NR.sub.2).sub.4, where R is selected from the group consisting of H and a carbon containing radical, and utilizing deposition conditions of from 200.degree. C. to 600.degree. C. and from 0.1 to 100 Torr.
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Fazan Pierre C.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Tsai Jey
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