Process for producing ROM

Details Process for producing ROM Process for producing ROM

1991-12-06

1994-01-04

Fourson, George

Fishing, trapping, and vermin destroying

437 30, 437 44, 437 45, 437 52, 437 58, H01L 21265

Patent

active

052759598

ABSTRACT:
MISFET's are formed in the depletion mode in advance. MISFET's which are selected from these depletion-mode MISFET's are then formed into enhancement-mode or weak depletion-mode MISFET's to thereby write desired data into the memory cells of a read-only memory. The change of the MISFET's from the depletion mode into the enhancement mode (or weak depletion mode) is effected by introducing an impurity into the channel regions of the selected MISFET's in a manufacturing step that is carried out after the formation of the gate electrodes of the MISFET's.

REFERENCES:
patent: 4080718 (1978-03-01), Richman
patent: 4364167 (1982-12-01), Donley
patent: 4365405 (1982-12-01), Dickman et al.
patent: 5081052 (1992-01-01), Kabayashi et al.
Ghandhi, S., VLSI Fabricator Principles, John Wiley & Sons, 1983 pp. 421-427.

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