Optical waveguides – Integrated optical circuit
Reexamination Certificate
2001-02-09
2003-07-01
Bovernick, Rodney (Department: 2874)
Optical waveguides
Integrated optical circuit
Reexamination Certificate
active
06587605
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to integrated circuit input and/or output and, more specifically, the present invention relates to the optical coupling of integrated circuit inputs and/or outputs.
2. Description of Related Art
Within the integrated circuit industry there is a continuing effort to increase integrated circuit speed as well as device density. One challenge that integrated circuit designers face with increasing circuit speeds and device densities is the increasingly significant propagation delays of circuit inputs and outputs due to the capacitive loading associated with circuit connections. At slower clock speeds, the capacitive loading on integrated circuit lines is generally not a significant factor. However, as newer integrated circuit design clock speeds continue to climb towards the gigahertz range and beyond, it is evident that one of the major bottlenecks for future integrated circuits, such as for example but not limited to microprocessors, off-chip caches, controllers, etc., is the input/output bandwidth and/or round trip delay between and within chips.
Prior attempts to address the capacitive loading problems associated with increased integrated circuit speeds and device densities have resulted in the use of larger and more powerful integrated circuit input and/or output drivers on the chip. An undesirable consequence of using larger input/output drivers is that the larger input/output drivers generally consume more power, dissipate more heat and occupy more valuable area on the integrated circuit die than smaller integrated circuit input/output drivers.
Other prior attempts to overcome traditional integrated circuit connection limitations have included the use of gallium arsenide (GaAs) technology-based optical interconnection techniques. For example, some approaches use GaAs laser diodes that are electrically modulated and switched. Other approaches use GaAs-built modulators that amplitude modulate a laser beam that passes through an integrated circuit. The modulation used in these prior approaches is based on electroabsorbtion through strained multi-layer grown molecular beam epitaxy (MBE) films in GaAs integrated circuits.
As can be appreciated by those skilled in the art, it is difficult to combine III-V-based technology, which includes GaAs, with standard silicon-based complementary metal oxide semiconductor (CMOS) technology, for example. Because many integrated circuits in production today and planned for the future use CMOS or other types of non-III-V technology, it may be impractical to use the above-described approaches in many cases.
SUMMARY OF THE INVENTION
An optical interconnection is disclosed. In one embodiment, the disclosed optical interconnection includes a semiconductor die having a first insulating layer disposed between a semiconductor substrate and a semiconductor layer. The optical interconnection also includes a first optical conduit disposed in the first insulating layer between the semiconductor substrate and the semiconductor layer to provide an optical path for light to travel through a back side of the semiconductor substrate, through the first optical conduit and through the semiconductor layer.
Additional features and benefits of the present invention will become apparent from the detailed description, figures and claims set forth below.
REFERENCES:
patent: 4422088 (1983-12-01), Gfeller
patent: 4695120 (1987-09-01), Holder
patent: 4758092 (1988-07-01), Heinrich et al.
patent: 4761620 (1988-08-01), Bar-Joseph et al.
patent: 4865427 (1989-09-01), Kingston et al.
patent: 4871224 (1989-10-01), Karstensen et al.
patent: 4917450 (1990-04-01), Pocholle et al.
patent: 4966430 (1990-10-01), Weidel
patent: 5061027 (1991-10-01), Richard
patent: 5153770 (1992-10-01), Harris
patent: 5159700 (1992-10-01), Reid et al.
patent: 5198684 (1993-03-01), Sudo
patent: 5357103 (1994-10-01), Sasaki
patent: 5400419 (1995-03-01), Heinen
patent: 5432630 (1995-07-01), Lebby et al.
patent: 5434434 (1995-07-01), Kasahara et al.
patent: 5485021 (1996-01-01), Abe
patent: 5502779 (1996-03-01), Magel
patent: 5568574 (1996-10-01), Tanguay, Jr. et al.
patent: 5605856 (1997-02-01), Goosen et al.
patent: 5625636 (1997-04-01), Bryan et al.
patent: 5629838 (1997-05-01), Knight et al.
patent: 5638469 (1997-06-01), Feldman et al.
patent: 5696862 (1997-12-01), Hauer et al.
patent: 5835646 (1998-11-01), Yoshimura et al.
patent: 5864642 (1999-01-01), Chun et al.
patent: 5872360 (1999-02-01), Paniccia et al.
patent: 6049639 (2000-04-01), Paniccia et al.
patent: 6052498 (2000-04-01), Paniccia
patent: 6301401 (2001-10-01), La
patent: 6393169 (2002-05-01), Paniccia et al.
patent: 6393183 (2002-05-01), Worley
patent: 6501092 (2002-12-01), Nikonov et al.
Miller, DAB: “Reason and Prospects for Dense Otical Interconnections,” Presentation by Stanford University professor, (Oct. 1997).
Sakano, S. et al.: “InGaAsP/InP Monolithic Integrated Circuit with Lasers and an Optical Switch,” Electronics Letters, 22(11), May 1986.
Mansuripur, M. and Goodman, JW: “Signal and Noise in Magneto-Optical Readout,” J.Appl.Phys., 53(6), Jun. 1982.
Alping, A et al.: “Highly Efficient Waveguide Phase Modulator for Integrated Optoelectronics,” Appl.Phys.Lett., 48(19), May 1986.
Levitan, SP et al.: “Computer-Aided Design of Free-Space Opto-Electronic Systems,” DAC 97, Anaheim, California (1997). (Month unknown).
Goodman, JW et al.: “Optical Interconnections for VLSI Systems,” Proc. IEEE, 72(7), Jul. 1984.
Wang, C. et al.:“Ultrafast, All-Silicon Light Modulator,” Optics Letters, 19(18), Sep. 1994.
Tada, K. and Okada, Y: “Bipolar Transistor Carier-Injected Optical Modulator/Switch: Proposal and Analysis,” IEEE Elctr Dev Ltrs, 7(11), 1986 (Nov.).
Fernando, C. et al: “Si/Si0.85/GE0.15/Si P-I-N Waveguide Optical Intensity Modulator,” SPIE, vol. 2402(131). 1995. (Month unknown).
Raybon, G., et al.: “A Reconfigurable Optoelectronic Wavelength Converter based on an Integrated Electroabsorption Modulated Laser Array” in 1997 Digest of the IEEE/LEOS Summer Topical Meetings, Montreal, Quebec, Canada, Aug. 1997.
Reiley, DF, and Sasian JM: “Optical Design of a Free-Space Photonic Switching System” in Applied Optics, vol. 36(19), Jul. 1997.
Cutolo, A., et al.: “Silicon Electro-Optic Modulator Based on a Three Terminal Device Integrated in a Low-Loss Single-Mode SOI Waveguide” in J. of Lightwave Technology, vol. 15(3), Mar. 1997.
Koren, U., et al.: “A Polarization Insensitive Semiconductor Optical Amplifier with Integrated Electroadsorption Modulators” in Integrated Photonics Research, Apr. 29-May 2, 1996 Technical Digest Series, vol. 6, 1996.
Krishnamoorthy, AV, and Miller, DABM: “Free-Space Optical Interconnections for VLSI Systems: A Technology Roadmap,” Conference Proceedings Leos '96 9th Annual Meeting IEEE Lasers and Electro-Optics (vol. 1), Nov. 1996.
Goosen, KW: “GaAs MQW Modulators Integrated With Silicon CMOS”, in IEEE Photonics Technology Letters, vol. 7(4), Apr. 1995.
“Optoelectronic VLSI Foundry Services From Lucent Technologies”, Lucent Technologies Bell Labs Innovations Web Page at http://www.bell-labs.com/prject/oevlsi/, updated Mar. 2, 1997.
“Process for Fabricating OE/LSI Chips,” Lucent Technologies Bell Labs Innovations Web Page at http://www.bell-labs.com/project/oevlsi/wfabproc.html, updated Sep. 26, 1996.
“Detailed Design Rules for Workshop Chips,” Lucent Technologies Bell Labs Innovations Web page at http://www.bell-labs.com/project/oevlsi/wdesrule.html, updated Mar. 7, 1997.
Silva, MTC, and Herczfeld PR: “Optical Intensity Modulator Based on Electrically Induced Periodic Structure” Optoelectronics and Systems Research Laboratory, Sao Paulo & Center for Microwave and Lightwave Engineering, Drexel Univ., Philadelphia, PA. (date unknown).
Kuwamura, Y, et al.: “Analysis of Operating Mechanism in Semiconductor Optical Modulator with Electron-Depleting Absorption Control” in Electronics and Communications in Japan, vol. 79(5), Dec. 1995.
Liu, MY and Chou, SY: “High-Modulation-Depth and Short-Cavity-Length Silicon Fabry-Perot
Morse Michael T.
Paniccia Mario J.
Rao Valluri R. M.
Bovernick Rodney
Intel Corporation
Stahl Mike
LandOfFree
Method and apparatus for providing optical interconnection does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for providing optical interconnection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for providing optical interconnection will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3002045