Method of fabrication of devices with different operating charac

Details Method of fabrication of devices with different operating charac Method of fabrication of devices with different operating charac

1993-05-19

1994-08-30

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 90, 437157, 437205, 437904, 257 9, 148DIG106, 148DIG143, H01L 2120

Patent

active

053428048

ABSTRACT:
A semiconductor device structure (10) includes similar devices (30), (32), and (34) having different operating characteristics. Each similar device is formed on a semiconductor substrate layer (14) through openings (16), (18), and (20) in a mask layer (12). Each opening (16), (18), and (20) has a different feature size and spacing that allows for various thickness levels of layers within the similar devices (30), (32), and (34) due to desorption from the mask layer (12). The growth rate within each opening (16), (18), and (20) is inversely proportional to the feature size of the respective opening.

REFERENCES:
patent: 4147573 (1979-04-01), Morimoto
patent: 4426767 (1984-01-01), Swanson et al.
patent: 4549926 (1985-10-01), Corboy, Jr. et al.
patent: 4637127 (1987-01-01), Kurogi et al.
G. Coudenys, G. Vermeire, Y. Zhu I. Moerman, L. Buydens, P. Van Daele, and P. Demeester, "Novel Growth Techniques for the Fabrication of Photonic Integrated Circuits", Mat. Res. Soc. Symp. Proc., vol. 240, pp. 15-26, 1992.
A. Christou and H. S. Ruppercht, "Gallium Arsenide and Related Compounds 1987", Instiute of Physics Conference Series Number 91, pp. 183-186, Sep. 28, 1987-Oct. 1, 1987.
O. Kayser, R. Westphalen, B. Opitz and P. Balk, "Control of Selective Area Growth of InP", Journal of Crystal Growth, 112, pp. 111-122, 1991.
Y. D. Galeuchet and P. Roentgen, "Selective Area MOVPE of GaInAs/InP Heterostructures on Masked and Nonplanar (100) and (111) Substrates", Journal of Crystal Growth, 107, pp. 147-150, 1991.
C. Blaauw, A. Szaplonczay, K. Fox, and B. Emmerstorfer, "MOCVD of InP and Mass Transport on Structured InP Substrates", Journal of Crystal Growth, 77, pp. 326-333, 1986.
K. Azoulay, N. Bouadma, J. C. Bouley, and L. Dugrand, "Selective MOCVD Epitaxy for Optoelectronic Devices", Journal of Crystal Growth, 55, pp. 229-234, 1981.
Jan-Otto Carlsson, "Selective Vapor-Phase Deposition on Patterned Substrates", Solid State and Materials Sciences, vol. 16, Issue 3, pp. 161-212, 1990.

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