Process for preparing heat sensitive semiconductor switch

Details Process for preparing heat sensitive semiconductor switch Process for preparing heat sensitive semiconductor switch

1978-12-05

1980-07-01

Dean, R.

Metal treatment

Compositions

Heat treating

357 28, 357 38, 357 91, H01L 2356, H01L 2966, H01L 21263

Patent

active

042104661

ABSTRACT:
A process for preparing heat sensitive semiconductor switch which switches from OFF state to ON state at relatively low temperature.
In a heat sensitive thyristor having PNPN four layer structure, an N type base region is exposed at one part of the surface exposed part in the P type base region to form an opening and ions of a P type impurity such as boron, aluminum and gallium are implanted from the opening to form a part having a large leakage current in a collector junction under excellent control, and to provide lower switching temperature for switching from the OFF state to the ON state with high reproducibility.

REFERENCES:
patent: 3971056 (1976-07-01), Jaskolski et al.
patent: 4047976 (1977-09-01), Bledsoe et al.
patent: 4081818 (1978-03-01), Nakata
patent: 4112458 (1978-09-01), Jaskolski et al.
patent: 4117505 (1978-09-01), Nakata
patent: 4134778 (1979-01-01), Sheng et al.

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