Semiconductor structure having contact openings with sloped side

Details Semiconductor structure having contact openings with sloped side Semiconductor structure having contact openings with sloped side

1974-05-17

1976-03-16

James, Andrew J.

357 54, 29578, 29590, H01L 2934

Patent

active

039450309

ABSTRACT:
Semiconductor structure having a semiconductor body with a planar surface. At least one region having an impurity therein is formed in the body and extends to the surface. A layer of insulating material is provided on the surface. Openings are formed in the layer of insulating material and expose said surface. The openings are defined by inclined side walls which extend at an angle with respect to said surface of less than 70.degree.. Contact means is carried by the surface and extends through the opening to form contact with the region. At least portions of the contact means have a slope which conforms generally to the slope of the side walls.
In the method, two materials are utilized in which one material has an appreciably higher etch rate than the other material so that a slope is provided on the material having the lower etch rate.

REFERENCES:
patent: 3496426 (1970-02-01), Kaiser
patent: 3586549 (1971-06-01), Gray
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3798514 (1974-03-01), Hayashi et al.

Affiliated with

Also associated with

Rating

Semiconductor structure having contact openings with sloped side does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure having contact openings with sloped side, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure having contact openings with sloped side will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-296616