Semiconductor diode with layers of different but related resisti

Details Semiconductor diode with layers of different but related resisti Semiconductor diode with layers of different but related resisti

1974-03-19

1976-03-16

James, Andrew J.

357 20, 357 88, 357 89, H01L 2992

Patent

active

039450295

ABSTRACT:
The semiconductor junction of a diode is made up of p- and n-type layers, said layers having substantially different resistivities. The thickness of the layer with a greater resistivity does not exceed that of the space charge when a reverse bias voltage, which is less than the puncture voltage of the semiconductor junction, is applied to the structure. The minimum distance between the edge of the ohmic contact adjoining the layer with a greater resistivity and the place of emergence of the semiconductor junction to the surface of the structure is no less than the double thickness of the layer with a greater resistivity.

REFERENCES:
patent: 3553539 (1971-01-01), Nakashima et al.
patent: 3555373 (1971-01-01), Kawana et al.
patent: 3663874 (1972-05-01), Fukukawa
patent: 3764415 (1973-10-01), Raabe et al.

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