Vertical thin film transistor and optical sensor having leakage

Details Vertical thin film transistor and optical sensor having leakage Vertical thin film transistor and optical sensor having leakage

1989-10-27

1991-02-26

Mintel, William

357 4, 357 15, 357 23400, 357 30, 357 53, H01L 2701, H01L 2712, H01L 2948, H01L 2910

Patent

active

049965735

ABSTRACT:
A thin film transistor and optical sensor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, a source electrode comprising finger elements, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, a drain electrode layer contiguous with the semiconductor layer, barrier elements for inhibiting a drain field from reaching the source electrode, and a transparent, electrically conductive drain contact member contiguous with said drain electrode layer, through which optical energy may pass to the semiconductor layer.

REFERENCES:
patent: 4746960 (1988-05-01), Valeri et al.
patent: 4755859 (1988-07-01), Suda et al.
patent: 4803533 (1989-02-01), Chang et al.

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