Integrated three-dimensional localized epitaxial growth of Si wi

Details Integrated three-dimensional localized epitaxial growth of Si wi Integrated three-dimensional localized epitaxial growth of Si wi

1984-11-26

1985-11-05

O'Keefe, Veronica

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

148DIG26, 148DIG59, 148DIG72, 148175, 148 334, 428642, 357 16, 357 17, H01L 21205

Patent

active

045513945

ABSTRACT:
Localized epitaxial growth of GaAs from a silicon monocrystalline substrate to provide a three-dimensional Si-GaAs structure and method. The silicon has an insulating layer deposited thereover and a window is opened through the layer to expose a small area of the underlying silicon from which silicon is epitaxially grown until the window is nearly full whereupon a thin buffer layer such as germanium is epitaxially grown over the epi-silicon to fill the window. Al.sub.x Ga.sub.1-x As (where x.gtoreq.0) is then locally epitaxially grown from the buffer layer and it grows laterally as well as vertically to cover the surrounding insulating layer surface and provide a site for high frequency electronics.

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