CMOS/CCD line transfer imager with low dark current

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C348S308000

Reexamination Certificate

active

06433326

ABSTRACT:

The invention is generally related to image processing systems and, more specifically, to a method and apparatus for low light imaging.
BACKGROUND OF THE INVENTION
Night vision systems have become increasingly reliant on infrared imaging and detection in recent years. Present silicon imagers often require auxiliary cooling to achieve useful night vision imaging. This is because of the need to reduce the dark current level within the imager. That is, within a charge coupled device (CCD) imager, the dark current shot noise adds in quadrature with the imager readout noise, thereby degrading the useful signal-to-noise ratio. Typically, a thermoelectric cooler is used to reduce the temperature of the CCD imager and, therefore, reduce the imager dark current level. Unfortunately, such a thermoelectric cooler greatly adds to both the weight and power consumption of the resulting imaging device.
Therefore, it is seen to be desirable to provide a night vision imaging apparatus having a dark current that is low enough to avoid the use of a thermoelectric cooler.
SUMMARY OF THE INVENTION
The disadvantages of the prior art are overcome by the present invention of an imager architecture in which low imager dark current levels are achieved without auxiliary cooling devices. Imaging apparatus according to an embodiment of the present invention utilizes a line transfer imager with horizontal line readout and vertical complementary metal oxide (CMOS) scanning. Specifically, a two dimensional array of charge coupled devices having relatively small individual areas with respect to the line pitch are read as respective horizontal lines using a low noise CCD output stage. Select lines and a shift register or decoder using CMOS circuits integrated with the CCD lines are used. An optical lens array is used to increase the optical fill factor to compensate for the relatively small area covered by the deletions of the CCD array. Within the CCD array, unused area is filled with drains to reduce dark current and provide blooming control. Moreover, drain and dump gates at the top of the detectors provide additional blooming control and electronic shutter control. In one embodiment of the invention, virtual gate detectors with charge storage are used to simplify the overall device structure and reduce dark current.
A method according to an embodiment of the invention comprises the steps of: clearing dark current from a horizontal charge coupled device (CCD) register to a corresponding horizontal register dump drain; loading a detector signal into the CCD register; selecting the CCD register and reading out the contents of the register; and repeating the preceding steps for each horizontal line of a CCD array.


REFERENCES:
patent: 4642877 (1987-02-01), Garner et al.
patent: 4965471 (1990-10-01), Gaboury
patent: 5656806 (1997-08-01), Dautriche
patent: 5808329 (1998-09-01), Jack et al.
patent: 5808350 (1998-09-01), Jack et al.
patent: 5904493 (1999-05-01), Lee et al.
patent: 5923370 (1999-07-01), Miethig et al.
patent: 6051857 (2000-04-01), Miida
patent: 6091449 (2000-07-01), Matsunaga et al.
patent: 6160282 (2000-12-01), Merrill
patent: 03 228373 (1991-10-01), None
patent: 04 186772 (1992-07-01), None
patent: 08 330557 (1996-12-01), None
patent: 09 074180 (1997-03-01), None
W. F. Kosonocky et al., A schottky-Barrier Image Sensor with 100% Fill Factor, Proceedings of the SPIE, Apr. 18, 1990.
W. F. Kennan et al., A Channel-Stop-Defined Barrier and Drain Antiblooming Structure for Virtual Phase CCD Image Sensors, IEEE Transactions on Electron Devices, US, IEEE Inc., New York, vol. 36, No. 9-I, Sep. 1, 1989, pp. 1634-1638.
B. C. Burkey et al., The Pinned Photodiod for An Interline-Transfer CCD Image Sensor, Proceeding of the International Electron Devices Meeting, US, New York, IEEE, vol. PROC. 1984, Dec. 9, 1984, pp. 28-31
International Search Report, Apr. 9, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CMOS/CCD line transfer imager with low dark current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS/CCD line transfer imager with low dark current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS/CCD line transfer imager with low dark current will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2928653

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.