Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-03-29
1995-02-14
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, H01L 29796, H01L 2714, H01L 3100
Patent
active
053898052
ABSTRACT:
A solid-state image sensing device comprises: a charge storage layer (12) formed in the vicinity of a surface of a first conductive type semiconductor substrate (11), for transferring incident light into an electric signal photoelectrically and further storing the transferred electric signal as a signal charge temporarily; a transfer channel (14) formed on the surface of the semiconductor substrate, for transferring the signal charge stored in the charge storing layer; a depletion prevention layer (13) formed on the surface of the semiconductor substrate and on the charge storage layer, for preventing interfaces from being depleted; and a barrier layer (16) formed at a position deeper than the transfer channel, for preventing punch through from being generated between the charge storage layer (12) and the transfer channel (14). The barrier layer (16) is formed locally at such a position that a maximum impurity concentration thereof is located at a position deeper than the depletion prevention layer. In the image sensing device, when the junction length between the barrier layer and the depletion prevention layer is shortened for miniaturization, it is possible to prevent the impurity concentration of the transfer channel from being lowered by the barrier layer, so that a drop of the transfer capacity of the transfer channel can be prevented, thus reducing the size of and increasing the number of pixels.
REFERENCES:
patent: 4514766 (1985-04-01), Koike et al.
patent: 5132762 (1992-07-01), Yamada
patent: 5181093 (1993-01-01), Kawaura
patent: 5233429 (1993-08-01), Jung
patent: 5276341 (1994-01-01), Lee
patent: 5313081 (1994-05-01), Yamada
Kabushiki Kaisha Toshiba
Munson Gene M.
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