Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1993-12-10
1995-06-27
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257137, 257110, 257115, 257120, H01L 29747, H01L 29743
Patent
active
054282284
ABSTRACT:
A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.
Hasegawa Shigeru
Matsudai Tomoko
Nakagawa Akio
Nakayama Kazuya
Ogura Tsuneo
Abraham Fetsum
Kabushiki Kaisha Toshiba
Sikes William L.
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