Electroluminescent semiconductor device

Details Electroluminescent semiconductor device Electroluminescent semiconductor device

1979-04-18

1981-01-06

Edlow, Martin H.

357 16, 357 18, 357 48, H01L 3300

Patent

active

042439965

ABSTRACT:
An electroluminescent diode with photon recycling having an active electroluminescent second semiconductor layer present between a first and a third semiconductor layer with larger bandwidth and of opposite conductivity type. According to the invention, the active layer has a compensation factor of less than 1/3 and a thickness between 0.1 and 3 absorption lengths of the emitted radiation, the first semiconductor layer has a partially reflecting surface, and the third semiconductor layer has a reflecting surface with two preferably co-planar electrodes one of which is connected to the first semiconductor layer through a highly doped contact zone.

REFERENCES:
patent: 4011113 (1977-03-01), Thompson
patent: 4068252 (1978-01-01), Lebailly
patent: 4176367 (1979-11-01), Uematsu

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