Method of fabricating a gallium nitride based semiconductor devi

Details Method of fabricating a gallium nitride based semiconductor devi Method of fabricating a gallium nitride based semiconductor devi

1993-04-16

1995-02-14

Kunemund, Robert

Fishing, trapping, and vermin destroying

148DIG65, 148DIG113, H01L 2120

Patent

active

053895711

ABSTRACT:
Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.1-x Al.sub.x).sub. 1-y In.sub.y N are formed on the intermediate layer.

REFERENCES:
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5182670 (1993-01-01), Khan et al.
patent: 5247533 (1993-09-01), Okazaki et al.
Akasaki, et al. "Effects of AlN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties on GaN and Ga.sub.1-x Al.sub.x N(0<x.ltoreq.0.4) Films Grown on Sapphire Substrates by MOVPE," J. Crystal Growth 98 (1989) pp. 209-219.
Journal of Electrochemical Society/Solid State Science, vol. 118, 1971, pp. 1200-1203, "Gallium Nitride Films", T. L. Chu.
Journal of Electrochemical Society/Solid State Science, vol. 120, 1973, pp. 1783-1785, "Vapor Phase Expitaxial Growth of GaN on GaAs, GaP, Si, and Sapphire Substrates from GaBr.sub.3 and NH.sub.3 ", Yasuo Morimoto et al.

Affiliated with

Also associated with

Rating

Method of fabricating a gallium nitride based semiconductor devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a gallium nitride based semiconductor devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a gallium nitride based semiconductor devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-287701