Method of forming boron doped silicon layer and semiconductor

Details Method of forming boron doped silicon layer and semiconductor Method of forming boron doped silicon layer and semiconductor

1992-08-18

1995-02-14

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 29, 437 46, 437193, 437195, 437248, 437141, 4272481, H01L 2120

Patent

active

053895703

ABSTRACT:
A semiconductor layer forming method including depositing a boron doped amorphous silicon layer on a substrate having many steps, projections or cavities, by thermal decomposition of a higher order silane gas and diborane gas at 150.degree.-450.degree. C. The diborane gas is supplied to the substrate in a reaction limited.

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