Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1994-08-02

1995-06-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437188, 437197, H01L 2949

Patent

active

054279828

ABSTRACT:
A method for the fabrication of semiconductor device includes the steps of forming a first wiring layer on an insulating film overlaying a semiconductor substrate, depositing an interlayer insulating film entirely on the first wiring layer, etching the interlayer insulating film selectively to form a contact hole exposing the first wiring layer therethrough, forming a metal film on the interlayer insulating film and in the contact hole, etching the metal film selectively to leave the metal film only around the contact hole, depositing a mid-insulating film on the remaining metal film and on the interlayer insulating film applying annealing to the metal film to form a metal plug in the contact hole, the metal film filling the contact hole, removing the mid-insulating film and forming a second wiring layer on the interlayer insulating film and on the metal plug.

REFERENCES:
patent: 4587138 (1986-05-01), You et al.
patent: 4728627 (1988-03-01), Mase et al.
patent: 4927783 (1990-05-01), Arai et al.
patent: 5169803 (1992-12-01), Miyakawa
patent: 5229325 (1993-07-01), Park et al.
patent: 5250468 (1993-10-01), Matsuura et al.
patent: 5288664 (1994-02-01), Mukai
patent: 5332924 (1994-07-01), Kobayashi

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