Method of making a contact of a semiconductor memory device

Details Method of making a contact of a semiconductor memory device Method of making a contact of a semiconductor memory device

1993-12-01

1995-06-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, H01L 21441

Patent

active

054279801

ABSTRACT:
A contact of a semiconductor device has an interlayer-insulating film sandwiched between upper and lower conductive line patterns, a conductive pad for electrically connecting the upper and lower conductive line patterns via a contact hole formed in the interlayer-insulating film to expose the lower conductive line pattern to the upper conductive line pattern, and a barrier material pattern formed on the upper conductive line pattern and conductive pad to partially overlap the conductive pad with the upper conductive line pattern, so that the lower and upper conductive line patterns on both sides of the interlayer-insulating film partially overlap with each other without damaging the lower conductive line pattern, thereby improving packing density of the semiconductor device. Also, a manufacturing method of the contact is provided.

REFERENCES:
patent: 5094981 (1992-03-01), Chung et al.
patent: 5198388 (1993-03-01), Kawai
patent: 5198389 (1993-03-01), van der Patten et al.
patent: 5227335 (1993-07-01), Holschwander et al.
patent: 5229325 (1993-07-01), Park et al.
patent: 5290734 (1994-03-01), Boardman et al.

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