Method of making a thin film transistor

Details Method of making a thin film transistor Method of making a thin film transistor

1992-11-10

1995-06-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437187, 437909, 437170, H01L 21265

Patent

active

054279623

ABSTRACT:
A method of manufacturing a thin-film transistor which comprises the steps of forming a gate electrode on an insulating substrate, a gate insulating film covering the gate electrode, and an i-type a-Si layer on the gate insulating film, forming a blocking film made of metal such as Cr or the like on a channel-forming region of the i-type a-Si layer, and forming an n-type a-Si layer covering the i-type a-Si layer and the blocking film, forming a metal layer on the n-type a-Si layer, and etching a predetermined portion of the n-type a-Si layer and a predetermined portion of the metal layer, thereby forming a source electrode and a drain electrode. That portion of the blocking film which is located below a gap between the source electrode and the drain electrode is removed from the i-type a-Si layer.

REFERENCES:
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 5053354 (1991-10-01), Tanaka et al.
patent: 5091337 (1992-02-01), Wantanbe et al.

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