Plasma-etching apparatus

Details Plasma-etching apparatus Plasma-etching apparatus

1979-08-23

1981-01-06

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 204192E, 250531, B01K 100

Patent

active

042435064

ABSTRACT:
A "planar" type plasma-etching apparatus wherein one electrode is a metallic mesh electrode, while the other electrode is a metallic plate electrode, and wherein a work piece is placed outside the mesh electrode. This apparatus has the advantage that a work piece having a large area can be etched uniformly over its whole surface.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4123663 (1978-10-01), Horiike
patent: 4158589 (1979-06-01), Keller et al.
T. O. Herndon et al., "Plasma Etching of Aluminum", Kodak Microelectronics Seminar Proceedings (1977), pp. 33-41.
S. M. Irving et al., "Localized Plasma Etching of Dielectric & Silicon Films", Kodak Microelectronics Seminar Proceedings (1977), pp. 55-65.

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