Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2008-01-01
2008-01-01
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S201000, C117S202000, C117S203000, C117S204000, C118S500000, C118S715000, C118S725000
Reexamination Certificate
active
07314519
ABSTRACT:
A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rgbetween the heat flow control section and the heat flow transmitting section is not less than 1.0×10−6m2K/W to not more than 5.0×10−3m2K/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.
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Makino Nobuhito
Shimizu Eiichi
Birch & Stewart Kolasch & Birch, LLP
Kunemund Robert
Nippon Mining & Metals Co., Ltd.
Rao G. Nagesh
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