Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-01-15
2008-01-15
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE21414, C257SE21703
Reexamination Certificate
active
07319239
ABSTRACT:
The present invention provides the substrate for a display device, comprising a scan line, a signal line and a switching element on an insulating substrate, and further comprising an interlayer insulation film and a pixel electrode, the switching element is provided at an intersection of the scan line and the signal line, and have a gate electrode connected to the scan line, a source electrode connected to the signal line, and a drain electrode connected to the pixel electrode, the interlayer insulation film has a contact hole for connecting the drain electrode of the switching element to the pixel electrode, and a protective layer is provided above the scan line and/or the signal line in the substrate for a display device.
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Enda Kenji
Tsubata Toshihide
Dickey Thomas L.
Keating & Bennett LLP
Sharp Kabushiki Kaisha
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