Methods of forming trench isolation in the fabrication of...

Details Methods of forming trench isolation in the fabrication of... Methods of forming trench isolation in the fabrication of...

2008-05-06

2008-05-06

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C257SE21548

Reexamination Certificate

active

07368366

ABSTRACT:
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated circuitry such as memory integrated circuitry.

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