Semiconductor device

Details Semiconductor device Semiconductor device

2008-01-29

2008-01-29

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000, C257SE21575, C257SE21597, C257SE23175, C438S637000, C438S621000

Reexamination Certificate

active

07323785

ABSTRACT:
A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.

REFERENCES:
patent: 7157372 (2007-01-01), Trezza
patent: 2006/0001174 (2006-01-01), Matsui
patent: 2006/0006539 (2006-01-01), Matsui et al.
patent: 2006/0118965 (2006-06-01), Matsui
patent: 2006/0278995 (2006-12-01), Trezza
patent: 2002-289623 (2002-10-01), None
patent: 2003-17558 (2003-01-01), None

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