Semiconductor device and production method therefor

Details Semiconductor device and production method therefor Semiconductor device and production method therefor

2008-05-13

2008-05-13

Luu, Chuong A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S775000, C257S758000, C257S760000

Reexamination Certificate

active

07372163

ABSTRACT:
A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a second interconnection layer of gold provided as an uppermost interconnection layer on the interlevel insulation film; and a barrier layer provided between the first interconnection layer and the second interconnection layer in an interlevel connection opening formed in the interlevel insulation film. The barrier layer includes a first sublayer provided in contact with the first interconnection layer to reduce a contact resistance, a second sublayer provided in contact with the second interconnection layer to improve a bonding strength, and a third sublayer provided between the first sublayer and the second sublayer. The first sublayer, the second sublayer and the third sublayer are, for example, a first tantalum sublayer, a second tantalum sublayer and a tantalum nitride sublayer, respectively.

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