Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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Details

C257SE23062, C257SE23063, C257SE23079, C257S685000, C257S723000, C257S777000, C257S668000, C257SE25013, C257SE23052, C257SE25023, C257SE23172, C257SE25029, C257SE23013

Reexamination Certificate

active

07385281

ABSTRACT:
A COC DRAM including a plurality of stacked DRAM chips is mounted on a motherboard by using an interposer. The interposer includes a Si unit and a PCB. The Si unit includes a Si substrate and an insulating-layer unit in which wiring is installed. The PCB includes a reference plane for the wiring in the Si unit. The wiring topology between a chip set and the COC DRAM is the same for every signal. Accordingly, a memory system enabling a high-speed operation, low power consumption, and large capacity is provided.

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