Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2008-05-13
2008-05-13
Seter, A. (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S624000, C438S128000, C438S151000, C257S736000, C257SE21016
Reexamination Certificate
active
07371598
ABSTRACT:
The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.
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Office Action (Application No. 200410083448.0 CN7391 Dated: Aug. 24, 2007) with FULL translation.
Nakamura Osamu
Sato Junko
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Seter A.
Wilson Scott R.
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