Semiconductor having thick dielectric regions

Details Semiconductor having thick dielectric regions Semiconductor having thick dielectric regions

2008-03-04

2008-03-04

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE21547, C257SE21549, C257SE21550, C257SE21551

Reexamination Certificate

active

07339252

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The method also includes providing in the semiconductor substrate one or more trenches, first mesas and second mesas. The method also includes oxidizing sidewalls and bottoms of each trench; depositing a doped oxide into each trench and on the tops of the first and second mesas; and thermally oxidizing the semiconductor substrate at a temperature sufficient enough to cause the deposited oxide to flow so that the silicon in each of the first mesas is completely converted to silicon dioxide while the silicon in each of the second mesas is only partially converted to silicon dioxide and so that each of the trenches is filled with oxide.

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