Common word line edge contact phase-change memory

Details Common word line edge contact phase-change memory Common word line edge contact phase-change memory

2008-04-29

2008-04-29

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S674000, C257SE21536

Reexamination Certificate

active

07364935

ABSTRACT:
A method of fabricating a phase-change memory cell is described. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a first dimension of a bottom electrode and a second dimension controlled by an etch process. The contact area is a product of the first dimension and the second dimension. The method allows the formation of very small phase-change memory cells.

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patent: 6597009 (2003-07-01), Wicker

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